High-Power PNP Silicon Transistors

. . . designed for use in industrial–military power amplifier and switching circuit applications.

• High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438
• High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (Min) @ IC = 25 Adc
• Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
• Complement to NPN 2N6339 thru 2N6341