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SCTW40N120G2VAG Datasheet (PDF) - STMicroelectronics
SCTW40N120G2VAG Datasheet PDF - STMicroelectronics
Part # SCTW40N120G2VAG
Download  SCTW40N120G2VAG Download
File Size   210.0 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW40N120G2VAG Datasheet (PDF)

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SCTW40N120G2VAG Datasheet PDF - STMicroelectronics

Part # SCTW40N120G2VAG
Download  SCTW40N120G2VAG Click to download

File Size   210.0 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW40N120G2VAG Datasheet (HTML) - STMicroelectronics


SCTW40N120G2VAG Product details

Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW40N120G2VAG Product summary

Applications
■ Charger
■ Power supply for renewable energy systems
■ High frequency DC-DC converters




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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