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1N5404GP Datasheet (PDF) - Vishay Siliconix
1N5404GP Datasheet PDF - Vishay Siliconix
Part # 1N5404GP
Download  1N5404GP Download
File Size   88.0 Kbytes
Page   4 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Glass Passivated Junction Plastic Rectifier

1N5404GP Datasheet (PDF)

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1N5404GP Datasheet PDF - Vishay Siliconix

Part # 1N5404GP
Download  1N5404GP Click to download

File Size   88.0 Kbytes
Page   4 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Glass Passivated Junction Plastic Rectifier

1N5404GP Datasheet (HTML) - Vishay Siliconix


1N5404GP Product details

• Superectifier structure for high reliability
condition
• Cavity-free glass-passivated junction
• Low leakage current, typical IR less than 0.1 μA
• Low forward voltage drop
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106




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About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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