| Manufacturer | Part # | Datasheet | Description |
 ON Semiconductor |
NTH4L080N120SC1
|
419Kb / 8P |
MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m
December, 2019??Rev. 1 |
 Cree, Inc |
CAB011M12FM3
|
2Mb / 11P |
1200 V, 11 m廓 All-Silicon Carbide
|
 ON Semiconductor |
NTC040N120SC1
|
223Kb / 8P |
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 40 m
September, 2020 ??Rev. 0 |
|
NTC080N120SC1
|
273Kb / 8P |
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m
June, 2020 ??Rev. 0 |
|
NVC020N120SC1
|
215Kb / 8P |
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 20 m
June, 2020-Rev. 0 |
|
NVC040N120SC1
|
223Kb / 8P |
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 40 m
September, 2020-Rev. 0 |
|
NVC080N120SC1
|
273Kb / 8P |
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m
June, 2020-Rev. 0 |
|
FFSH20120A-F155
|
282Kb / 6P |
Silicon Carbide Schottky Diode 1200 V, 20 A
August, 2020 - Rev. 0 |
|
FFSB20120A-F085
|
316Kb / 6P |
Silicon Carbide Schottky Diode 1200 V, 20 A
March, 2022 - Rev. 2 |
 Alpha & Omega Semicondu... |
AOK033V120X2
|
829Kb / 9P |
1200 V αSiC Silicon Carbide Power MOSFET
Rev. 1.0 June 2021 |