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SIP32501 Datasheet (PDF) - Vishay Siliconix

SIP32501 Datasheet PDF - Vishay Siliconix
Part # SIP32501
Download  SIP32501 Download
File Size   181.12 Kbytes
Page   11 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description 0.9 V to 2.5 V, 66 mΩ Load Switch in TDFN4

SIP32501 Datasheet (PDF)

Go To PDF Page Download Datasheet
SIP32501 Datasheet PDF - Vishay Siliconix

Part # SIP32501
Download  SIP32501 Click to download

File Size   181.12 Kbytes
Page   11 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description 0.9 V to 2.5 V, 66 mΩ Load Switch in TDFN4

SIP32501 Datasheet (HTML) - Vishay Siliconix


SIP32501 Product details

• Low input voltage, 0.9 V to 2.5 V
• Low RON, 66 mΩ typical
• Fast turn on time
• Low quiescent current
• Low logic control with hysteresis
• Reverse current blocking when disabled
• Integrated pull down at EN pin
• Output discharge
• TDFN4 1.2 mm x 1.6 mm




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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