3.1 Key Features
 BGT60 covers the V-Band frequency range from 57 to 64 GHz
 Fabricated with Infineon’s advanced Silicon-Germanium (SiGe) technology
 Housed in Infineon’s Embedded Wafer Level Ball-Grid Array (eWLB) Package
 BGT60 can be programmed via SPI interface to work either in transmit (TX) or/and receive (RX) mode
 Zero IF – differential I/Q interface – direct conversion architecture
 Differential RF transmit output signaling
 Differential RF receive input signaling
 Differential intermediate frequency I/Q signaling
 Peak detector at VGA input at transmit path
 Peak detector at PA output at transmit path
 Built-in temperature sensor
 SPI interface
 ESD protected device
 BITE (Built-In-Test Equipment) for self-test and calibration in production at Infineon to verify RF performance
 Can support TDD or FDD systems