General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Features and benefits
 Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
 Output power = 130 W
 Power gain = 12.5 dB
 Efficiency = 47 %
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2.9 GHz to 3.3 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range