Description
The ACE12021A is the Dual P-Channel enhancement mode Power field effect transistors are
produced using high cell density, DMOS trench technology. This high-density process is especially
tailored to minimize on-state resistance and provide superior switching performance. These devices are
particularly suited for low voltage applications such as notebook computer power management and other
battery power circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.

Features
⚫ -20V/0.45A, RDS(ON)=520mΩ@VGS=-4.5V
⚫ -20V/0.35A, RDS(ON)=700mΩ@VGS=-2.5V
⚫ -20V/0.25A, RDS(ON)=1500mΩ@VGS=-1.8V
⚫ Super high-density cell design for extremely low RDS (ON)
⚫ Exceptional on-resistance and maximum DC current capability

Application
⚫ Power Management in Note book
⚫ Portable Equipment
⚫ Battery Power Systems
⚫ DC/DC Converter
⚫ Load Switch
⚫ DSC
⚫ LCD Display inverter