DESCRIPTION
The AM8958 is the N & P-Channel enhancement
mode power field effect transistor using high cell
density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching
performance. This device is particularly suited for
low voltage application such as notebook computer
power management and other battery powered
circuits, where high-side switching, low inline power
loss and resistance to transient are needed.
The AM8958 is available in SOP8 Package

FEATURES
N-Channel
 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
 30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V
P-Channel
 -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
 -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
 Super high density cell design for extremely low
RDS(ON)
 Exceptional on-resistance and Maximum DC
current capability
 Available in SOP8 Package

APPLICATION
 Power Management in Note book
 Portable Equipment
 Battery Powered System