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STH2N120K5-2AG Datasheet (PDF) - STMicroelectronics
STH2N120K5-2AG Datasheet PDF - STMicroelectronics
Part # STH2N120K5-2AG
Download  STH2N120K5-2AG Download
File Size   440.23 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

STH2N120K5-2AG Datasheet (PDF)

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STH2N120K5-2AG Datasheet PDF - STMicroelectronics

Part # STH2N120K5-2AG
Download  STH2N120K5-2AG Click to download

File Size   440.23 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

STH2N120K5-2AG Datasheet (HTML) - STMicroelectronics


STH2N120K5-2AG Product details

Features
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested

Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.

Applications
• Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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