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STW40N60M2-4 Datasheet (PDF) - STMicroelectronics
STW40N60M2-4 Datasheet PDF - STMicroelectronics
Part # STW40N60M2-4
Download  STW40N60M2-4 Download
File Size   293.16 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 78 m typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package

STW40N60M2-4 Datasheet (PDF)

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STW40N60M2-4 Datasheet PDF - STMicroelectronics

Part # STW40N60M2-4
Download  STW40N60M2-4 Click to download

File Size   293.16 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 78 m typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package

STW40N60M2-4 Datasheet (HTML) - STMicroelectronics


STW40N60M2-4 Product details

Features
• Excellent switching performance thanks to the extra driving source pin
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected

Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.

Applications
• Switching applications
• LLC resonant converters




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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