DESCRIPTION
The M66281FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 5120 words x 8 bits x 2.
Since memory is available to simultaneously output 1 line delay and 2 line delay data, the M66281FP is optimal for the compensation of data of multiple lines.

FEATURES
• Memory configuration 5120 words x 8 bits x 2 (dynamic memory)
• High speed cycle 25 ns (Min.)
• High speed access 18 ns (Max.)
• Output hold 3 ns (Min.)
• Reading and writing operations can be completely carried out independently and asynchronously.
• Variable length delay bit
• Input/output TTL direct connection allowable
• Output 3 states
• Q00 – Q07 1 line delay
• Q10 – Q17 2 line delay

APPLICATION
• Digital copying machine, laser beam printer, high speed facsimile, etc.