DESCRIPTION
The TCET110. consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead plastic dual inline package.

FEATURES
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 7 groups
• Reinforced isolation provides circuit
protection against electrical shock (safety
class II)
• Isolation materials according to UL 94 V-0
• Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)
VIORM = 848 Vpeak
• Creepage current resistance according to VDE 0303 /
IEC 60112 comparative tracking index: CTI ≥ 175
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• For application class I to IV at mains voltage ≤ 300 V
• For application class I to III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface