1 Features
• 650-V GaN power-FET half bridge
• 170-mΩ low-side and 248-mΩ high-side GaN FETs
• Integrated gate drivers with low propagation delays
and adjustable turn-on slew-rate control
• Current-sense emulation with high-bandwidth and
high accuracy
• Low-side / high-side gate-drive interlock
• High-side gate-drive signal level shifter
• Smart-switched bootstrap diode function
• High-side start up : < 8 us
• Low-side / high-side cycle-by-cycle over-current
protection
• Over-temperature protection with FLT pin reporting
• AUX idle quiescent current: 240 μA
• AUX standby quiescent current: 50 μA
• BST idle quiescent current: 60 μA
• Maximum supply and input logic pin voltage: 26 V
• 9x7 mm QFN package with dual thermal pads

2 Applications
• Active-clamp flyback power converters
• AC/DC adapters and chargers
• AC/DC USB wall outlet power supplies
• AC/DC auxiliary power supplies

3 Description
The LMG2610 is a 650-V GaN power-FET half bridge
intended for < 75-W active-clamp flyback (ACF)
converters in switch mode power supply applications.
The LMG2610 simplifies design, reduces component
count, and reduces board space by integrating halfbridge
power FETs, gate drivers, bootstrap diode, and
high-side gate-drive level shifter in a 9-mm by 7-mm
QFN package.
The asymmetric GaN FET resistances are optimized
for ACF operating conditions. Programmable turnon
slew rates provide EMI and ringing control.
The low-side current-sense emulation reduces power
dissipation compared to the traditional current-sense
resistor and allows the low-side thermal pad to be
connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates
noise and burst-mode power dissipation problems
found with external solutions. The smart-switched
GaN bootstrap FET has no diode forward-voltage
drop, avoids overcharging the high-side supply, and
has zero reverse-recovery charge.
The LMG2610 supports converter light-load efficiency
requirements and burst-mode operation with low
quiescent currents and fast start-up times. Protection
features include FET turn-on interlock, under-voltage
lockout (UVLO), cycle-by-cycle current limit, and overtemperature
shut down.