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STB5NK50Z-1 Datasheet (PDF) - STMicroelectronics
STB5NK50Z-1 Datasheet PDF - STMicroelectronics
Part # STB5NK50Z-1
Download  STB5NK50Z-1 Download
File Size   674.1 Kbytes
Page   29 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

STB5NK50Z-1 Datasheet (PDF)

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STB5NK50Z-1 Datasheet PDF - STMicroelectronics

Part # STB5NK50Z-1
Download  STB5NK50Z-1 Click to download

File Size   674.1 Kbytes
Page   29 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

STB5NK50Z-1 Datasheet (HTML) - STMicroelectronics


STB5NK50Z-1 Product details

Features
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected

Applications
• Switching applications

Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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