Plasma Display Panel (PDP)
Industrial Inverter
MOS FET / IGBT Gate Driver

The Toshiba TLP155E consists of an infrared emitting diodes and integrated
high gain, high-speed photodetectors. The TLP155E is housed in the SO6
package.
The photodetector has an internal Faraday shield that provides a guaranteed
common-mode transient immunity of ±15 kV/μs. TLP155E is suitable for
gate driving circuit for IGBTs or power MOSFETs.

 Buffer logic type (Totem pole output)
 Package type: SO6
 Peak Output Current : IOP = ±0.6 A (max)
 Guaranteed performance over temperature: -40 to 100 °C
 Threshold Input Current: IFLH = 7.5 mA (max)
 Propagation delay time : tpLH / tpHL = 200 ns (max)
 Common mode transient immunity : ±15 kV/μs (min)
 Isolation voltage : 3750 Vrms (min)
 UL-recognized: UL 1577, File No.E67349
 cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
 CQC-approved: GB4943.1, GB8898 Thailand Factory