DESCRIPTION
The SFH619A has a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon photodarlington
detector, and is incorporated in a plastic DIP-4 package.
It features a high current transfer ratio, low coupling
capacitance, and high isolation voltage.
The coupling device is designed for signal transmission
between two electrically separated circuits.

FEATURES
• High collector emitter voltage, VCEO = 300 V
• Low coupling capacitance
• High common mode transient immunity
• Isolation rated voltage 5000 VRMS
• Standard plastic DIP-4 package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912