NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION

DESCRIPTION
These products are general purpose transistors designed for use
in audio and radio frequency power amplifiers.

FEATURES
• Suitable for use in driver stage of 50 to 100 W audio amplifiers
and output stage of TV vertical deflection circuit.
• High voltage and high fT
VCEO = 120 V (2SC2690) / 160 V (2SC2690A)
fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)
• Complementary to the 2SA1220 and 2SA1220A PNP transistors.