Features
• Voltage Range: 1.65 V - 3.75 V
• 16 Mbit (2M x 8) Flash Memory
• Serial Peripheral Interface (SPI) compatible
• Supports SPI modes 0 and 3
• Supports single input/output operations (1-1-1)
• Supports dual output operation (1-1-2)
• Supports quad output operation (1-1-4)
• Supports quad I/O operation (1-4-4)
• Supports XiP operation (1-4-4, 0-4-4)
• 133 MHz maximum operating frequency
• Clock-to-output of 8 ns
• Flexible, optimized erase architecture for code
and data storage applications
• Uniform 4-kByte block erase
• Uniform 32-kByte block erase
• Uniform 64-kByte block erase
• Full chip erase
• Flexible non-volatile block protection
• 1 x 128-byte factory-programmed unique
identifier
• 3 x 128-byte, One Time Programmable (OTP)
security registers
• Flexible programming
• Byte/Page program (1 to 256 Bytes)
• Sequential program mode capability
• Erase program suspend resume
• Software controlled Reset and Terminate
commands
• Hardware reset option (via HOLD pin)
• JEDEC hardware reset
• Non-volatile status register configuration option
• JEDEC standard manufacturer and device ID
read methodology
• Serial Flash Discoverable Parameters (SFDP)
version 1.6
• Low power dissipation at 1.65 V to 3.6 V:
• 30 µA standby current (typical)
• 8.2 µA Deep Power-Down (DPD) current
(typical)
• 5 - 7 nA Ultra-Deep Power Down (UDPD)
current (typical)
• 8.3 mA active read current (1-1-1 — 108 MHz)
• 10.1 mA program current
• 10.7 mA erase current
• User configurable and auto I/O pin drive levels
• Endurance:
• 100,000 program/erase cycles
• 10,000 cycles (-40 oC to +105 oC)
• Data Retention:
• 20 years
• 10 years (-40 oC to +105 oC)
• Temperature Range:
• -40 oC to +85 oC
• -40 oC to +105 oC
• Industry standard green (Pb/Halide-free/RoHS
Compliant) Package Options
• 8-lead SOIC (150-mil)
• 8-lead SOIC (208-mil)
• 8-pad WDFN (5 x 6 x 0.8 mm)
• 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)
• 8-ball WLCSP (3 x 2 x 3 ball matrix)
• Die in Wafer Form (DWF)