Description
The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
 Based on Intel 8  8 DrMOS Specification.
 Built-in power MOS FET suitable for Desktop, Server, Notebook application.
 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
 Built-in driver circuit which matches the power MOS FET
 Built-in tri-state input function which can support a number of PWM controllers
 High-frequency operation (above 1 MHz) possible
 VIN operating-voltage range: 27 Vmax
 Large average output current (Max.50 A)
 Achieve low power dissipation
 Controllable driver: Remote on/off
 Low-side MOS FET disabled function for DCM operation
 Double thermal protection: Thermal Warning & Thermal Shutdown
 Built-in bootstrapping Switch
 Small package: QFN56 (8 mm  8 mm  0.95 mm)
 Terminal Pb-free/Halogen-free