1. General description
Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device
(SMD) plastic package.
PNP complement: PBSS5160V

2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency, reduces heat generation
• Reduces printed-circuit board area required
• Cost effective replacement for medium power transistor BCP55 and BCX55

3. Applications
• Major application segments:
• Telecom infrastructure
• Industrial
• Power management:
• DC-to-DC conversion
• Supply line switching
• Peripheral driver:
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)