Features
• DLA SMD 5962-11212
• Output current up to 3.0A at TJ = +150°C
• Output accuracy ±1.5% over MIL temperature range
• Ultra low dropout:
- 65mV (typical) dropout at 1.0A
- 225mV (typical) dropout at 3.0A
• SET mitigation with no added filtering/diodes
• Input supply range: 2.2V to 6.0V
• Fast load transient response
• Shutdown current of 1μA (typical)
• Output adjustable using external resistors
• PSRR 66dB (typical) at 1kHz
• Enable and PGood feature
• Programmable soft-start/inrush current limiting
• Over-temperature shutdown and programmable OCP limits
• Stable with 47μF min tantalum capacitor
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.