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NE52118 Datasheet (PDF) - Renesas Technology Corp
NE52118 Datasheet PDF - Renesas Technology Corp
Part # NE52118
Download  NE52118 Download
File Size   203.75 Kbytes
Page   14 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

NE52118 Datasheet (PDF)

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NE52118 Datasheet PDF - Renesas Technology Corp

Part # NE52118
Download  NE52118 Click to download

File Size   203.75 Kbytes
Page   14 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

NE52118 Datasheet (HTML) - Renesas Technology Corp


NE52118 Product details

L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT

FEATURES
· For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)
OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)
· 4-pin super minimold package
· Grounded Emitter Transistor




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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