140 W L-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION
The NES1720P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications
for PCS, PDC and PHS base station systems. It is capable of delivering 140 W of output power (CW) with high linear
gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.7 to 2.0
GHz. The device employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation
for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 140 W TYP.
• High linear gain: GL = 11.0 dB TYP.
• High power added efficiency: hadd = 43% TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 1.96 GHz