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S70GL01GN00FFI020 Datasheet (PDF) - SPANSION

S70GL01GN00FFI020 Datasheet PDF - SPANSION
Part # S70GL01GN00FFI020
Download  S70GL01GN00FFI020 Download
File Size   1893.39 Kbytes
Page   83 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

S70GL01GN00FFI020 Datasheet (PDF)

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S70GL01GN00FFI020 Datasheet PDF - SPANSION

Part # S70GL01GN00FFI020
Download  S70GL01GN00FFI020 Click to download

File Size   1893.39 Kbytes
Page   83 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

S70GL01GN00FFI020 Datasheet (HTML) - SPANSION


S70GL01GN00FFI020 Product details

General Description
The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Two 512 Megabit (S29GL512N) in a single 64-ball Fortified-BGA package
■ Two Chip Enable pins
   — Two CE# pins to control selection of each internal
      S29GL512N devices
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 110 nm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure
      identification through an 8-word/16-byte random
      Electronic Serial Number, accessible through a
      command sequence
■ Flexible sector architecture
   — Each internal S29GL512N device has five
      hundred-twelve 64Kword (128Kbyte) sector
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for
      single-power supply flash, and superior inadvertent write
      protection
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 110 ns (S29GL512N)
   — 8-word/16-byte page read buffer
   — 25 ns page read times
   — 16-word/32-byte write buffer reduces overall
      programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 25 mA typical active read current;
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 64-ball Fortified BGA

Software & Hardware Features
■ Software features
   — Program Suspend and Resume: read other sectors
      before programming operation is completed
   — Erase Suspend and Resume: read/program other
      sectors before an erase operation is completed
   — Data# polling and toggle bits provide status
   — Unlock Bypass Program command reduces overall
      multiple-word programming time
   — CFI (Common Flash Interface) compliant: allows host
      system to identify and accommodate multiple flash
      devices
■ Hardware features
   — Advanced Sector Protection
   — WP#/ACC input accelerates programming time
      (when high voltage is applied) for greater throughput
      during system production. Protects first or last sector
      regardless of sector protection settings
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or
      erase cycle completion




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