Description
Wolfspeed’s CG2H80120D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated
electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider
bandwidths compared to Si and GaAs transistors
Features
• 15 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 8 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 8 GHz Operation
• High Efficiency
• Bare die are shipped in Gel-Pak® containers
• Non-adhesive tacky membrane immobilizes die during shipment
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms