Description
Wolfspeed’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate
length fabrication process. This GaN-on-SiC product offers superior high frequency,
high efficiency features. It is ideal for a variety of applications operating from
10 GHz to 18 GHz at 40 V with a high breakdown voltage.
Large Signal Models Available for ADS and MWO
Features
• 17 dB Typ. Small Signal Gain at 10 GHz
• 60% Typ. PAE at 10 GHz
• 25 W Typical PSAT
• 40 V Operation
• Up to 18 GHz Operation
Applications
• Satellite Communications
• PTP Communications Links
• Marine Radar
• Pleasure Craft Radar
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers