DESCRIPTION
The μ PA2680T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The μ PA2680T1E incorporates a MOSFET which features a
low on-state resistance and excellent switching characteristics
and a low forward voltage Schottky Barrier Diode, and is
suitable for applications such as DC/DC converter of portable
machine and so on.
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET
RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
• Low forward voltage Schottky Barrier Diode
VF = 0.36 V TYP. (IF = 1.0 A)