Description
Wolfspeed’s CMPA5585030D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron
drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si and GaAs
transistors. This MMIC contains a two-stage reactively matched amplifier
design approach enabling very wide bandwidths to be achieved.
Features
• 30 dB Small Signal Gain
• 50 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.142 x 0.188 x 0.004 inches
Applications
• Point to Point Radio
• Communications
• Test Instrumentation
• EMC Amplifier Drivers