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UPD17P203A Datasheet (PDF) - Renesas Technology Corp

UPD17P203A Datasheet PDF - Renesas Technology Corp
Part # UPD17P203A
Download  UPD17P203A Download
File Size   314.47 Kbytes
Page   32 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD17P203A Datasheet (PDF)

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UPD17P203A Datasheet PDF - Renesas Technology Corp

Part # UPD17P203A
Download  UPD17P203A Click to download

File Size   314.47 Kbytes
Page   32 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD17P203A Datasheet (HTML) - Renesas Technology Corp


UPD17P203A Product details

FEATURES
• 17K architecture: General-purpose register format
• Pin-compatible (except for PROM programming function): µPD17P203A with µPD17203A
µPD17P204 with µPD17204
• Internal one-time PROM: 4096 x 16 bits (µPD17P203A)
7936 x 16 bits (µPD17P204)
• Static RAM: 16 Kbits (µPD17P203A)
8 Kbits (µPD17P204)
• Power supply voltage: 2.9 to 5.5 V (at TA = –20 to +75°C, fX = 4MHz)
2.0 to 5.5 V (at TA = –20 to +75°C, fXT = 32kHz)




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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