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STP120NF10 Datasheet (PDF) - STMicroelectronics
STP120NF10 Datasheet PDF - STMicroelectronics
Part No. STP120NF10
Download  STP120NF10 Click to view

File Size   376.56 Kbytes
Page   15 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

STP120NF10 Datasheet (PDF)

Go To PDF Page Download Datasheet
STP120NF10 Datasheet PDF - STMicroelectronics

Part No. STP120NF10
Download  STP120NF10 Click to view

File Size   376.56 Kbytes
Page   15 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

STP120NF10 Datasheet (HTML) - STMicroelectronics

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STP120NF10 Product details

Description
These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer application. It is also intended for any applications with low gate drive requirements.

Features
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Application
■ Switching applications



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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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