1. General description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88
package using advanced TrenchMOS Superjunction technology. This product has been designed
and qualified for high performance industrial applications.
2. Features and benefits
• 280 Amp continuous current capability
• LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,
optimum soldering and easy solder-joint inspection
• Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)
rating
• Ideal replacement for D2PAK and 10 x 12 mm leadless package types
• Qualified to 175 °C
• Avalanche rated, 100 % tested
• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for
low EMI designs
• Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
• Narrow VGS(th) rating for easy paralleling and improved current sharing
• Very strong linear-mode / safe operating area characteristics for safe and reliable switching at
high-current conditions
3. Applications
• Brushless DC motor control
• Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
• Battery protection and Battery Management Systems (BMS)
• Load switch
• 10 cell lithium-ion battery applications (36 V ‒ 42 V)