Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.

Features
• 1200 V @ TJ = 175°C
• Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A
• High Speed Switching with Low Capacitance
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)

Applications
• Industrial Motor Drive
• UPS
• Boost Inverter
• PV Charger