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UMZ1NT1G Datasheet (PDF) - ON Semiconductor

UMZ1NT1G Datasheet PDF - ON Semiconductor
Part # UMZ1NT1G
Download  UMZ1NT1G Download
File Size   68.65 Kbytes
Page   5 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description Complementary Dual General Purpose Amplifier Transistor

UMZ1NT1G Datasheet (PDF)

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UMZ1NT1G Datasheet PDF - ON Semiconductor

Part # UMZ1NT1G
Download  UMZ1NT1G Click to download

File Size   68.65 Kbytes
Page   5 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description Complementary Dual General Purpose Amplifier Transistor

UMZ1NT1G Datasheet (HTML) - ON Semiconductor


UMZ1NT1G Product details

Features
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
                      − Machine Model: C
• Pb−Free Package is Available




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About ON Semiconductor


ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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