The FODM217 series consist of a gallium arsenide infrared emitting
diode driving a phototransistor. The FODM214 series consist of two
gallium arsenide infrared emitting diodes connected in inverse parallel
for AC operation. Both were built in a compact, half−pitch, mini−flat,
4−pin package. The lead pitch is 1.27 mm.
Features
• Current Transfer Ratio Ranges from 20 to 600%
at IF = ±1 mA, VCE = 5 V, TA = 25°C
♦ FODM214 − 20 to 400%
♦ FODM214A − 50 to 250%
at IF = 5 mA, VCE = 5 V, TA = 25°C
♦ FODM217A − 80 to 160%
♦ FODM217B − 130 to 260%
♦ FODM217C − 200 to 400%
♦ FODM217D − 300 to 600%
• Safety and Regulatory Approvals:
♦ UL1577, 3750 VACRMS for 1 min
♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
• Applicable to Infrared Ray Reflow, 260°C
Typical Applications
• Primarily Suited for DC−DC Converters
• For Ground Loop Isolation, Signal to Noise Isolation
• Communications – Adapters, Chargers
• Consumer – Appliances, Set Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic
Control