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MBM29LV160T Datasheet (PDF) - SPANSION

MBM29LV160T Datasheet PDF - SPANSION
Part # MBM29LV160T
Download  MBM29LV160T Download
File Size   731.38 Kbytes
Page   58 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

MBM29LV160T Datasheet (PDF)

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MBM29LV160T Datasheet PDF - SPANSION

Part # MBM29LV160T
Download  MBM29LV160T Click to download

File Size   731.38 Kbytes
Page   58 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

MBM29LV160T Datasheet (HTML) - SPANSION


MBM29LV160T Product details

■ GENERAL DESCRIPTION
The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES
• Single 3.0 V read, program and erase
    Minimizes system level power requirements
• Compatible with JEDEC-standard commands
    Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
    48-pin TSOP (1) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type)
    48-pin CSOP (Package suffix: PCV)
    48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
    80 ns maximum access time
• Sector erase architecture
    One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode
    One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode
    Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
    T = Top sector
    B = Bottom sector
• Embedded EraseTM* Algorithms
    Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms
    Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
    Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
    When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector protection
    Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector Protect command
• Fast Programming Function by Extended Command
• Temporary sector unprotection
    Temporary sector unprotection via the RESET pin
• In accordance with CFI (Common Flash Memory Interface)




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