FDN306P Datasheet(PDF)

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FDN306P Datasheet (PDF) - Guangdong Youtai Semiconductor Co., Ltd.


Part #	FDN306P

Download	FDN306P Download

File Size	468.58 Kbytes

Page	5 Pages

Manufacturer	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Direct Link	https://www.umw-ic.com/

Logo

Description

P-Channel 1.8 V (D-S) MOSFET

FDN306P Datasheet (PDF)

Download Datasheet


Part #	FDN306P

Download	FDN306P Click to download

File Size	468.58 Kbytes

Page	5 Pages

Manufacturer	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Direct Link	https://www.umw-ic.com/

Logo

Description	P-Channel 1.8 V (D-S) MOSFET

FDN306P Datasheet (HTML) - Guangdong Youtai Semiconductor Co., Ltd.

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FDN306P Product details

Features
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint

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