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2SB1215 Datasheet (PDF) - Inchange Semiconductor Company Limited

2SB1215 Datasheet PDF - Inchange Semiconductor Company Limited
Part # 2SB1215
Download  2SB1215 Download

File Size   323.55 Kbytes
Page   3 Pages
Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited
Description Silicon PNP Power Transistor

2SB1215 Datasheet (PDF)

Go To PDF Page Download Datasheet
2SB1215 Datasheet PDF - Inchange Semiconductor Company Limited

Part # 2SB1215
Download  2SB1215 Click to download

File Size   323.55 Kbytes
Page   3 Pages
Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited
Description Silicon PNP Power Transistor

2SB1215 Datasheet (HTML) - Inchange Semiconductor Company Limited

2SB1215 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB1215 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB1215 Datasheet HTML 3Page - Inchange Semiconductor Company Limited

2SB1215 Product details

DESCRIPTION
·Excellent linearity of hFE
·Low collector-to-emitter saturation voltage
·Fast switching speed
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications




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About Inchange Semiconductor Company Limited


Inchange Semiconductor Company Limited is a Chinese semiconductor company that was founded in 1997.

The company provides a wide range of products including discrete and analog power devices, and diodes for various applications in the automotive, industrial, and consumer markets.

Inchange is known for its focus on quality and reliability, and its products are widely used in power management, lighting, and other applications.

The company has operations in several countries and is one of the leading suppliers of power devices and diodes in the Asia-Pacific region.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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