Product Description
The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz.

Product Features
• 50 – 4000 MHz
• +27 dBm P1dB
• +40 dBm Output IP3
• High Drain Efficiency
• 20.5 dB Gain @ 900 MHz
• Lead-free/Green/RoHS compliant SOT-89 Package
• MTTF >100 Years

Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless