Description
The RM115N65T2 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.

General Feature
VDS =65V,ID =115A
RDS(ON) < 4.7mΩ @ VGS=10V
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
RDS(ON) < 8.0mΩ @ VGS=4.5V

Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Halogen-free