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SI4800 Datasheet (PDF) - NXP Semiconductors

SI4800 Datasheet PDF - NXP Semiconductors
Part # SI4800
Download  SI4800 Download
File Size   254.88 Kbytes
Page   13 Pages
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors
Description N-channel enhancement mode field-effect transistor

SI4800 Datasheet (PDF)

Go To PDF Page Download Datasheet
SI4800 Datasheet PDF - NXP Semiconductors

Part # SI4800
Download  SI4800 Click to download

File Size   254.88 Kbytes
Page   13 Pages
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors
Description N-channel enhancement mode field-effect transistor

SI4800 Datasheet (HTML) - NXP Semiconductors


SI4800 Product details


N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.



1. Low gate charge

2. Surface mounted package

3. Low on-state resistance

4. Fast switching.





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About NXP Semiconductors


NXP Semiconductors is a publicly traded multinational company that designs, develops, and manufactures a wide range of semiconductors and integrated circuits for various applications, including automotive, industrial, communications, and consumer markets.
The company was founded in 2006 and is headquartered in Eindhoven, Netherlands.
NXP offers a broad portfolio of products, including microcontrollers, microprocessors, secure authentication ICs, power management ICs, RF and microwave components, and sensor solutions, among others.
The company's products are designed to be energy efficient, secure, and reliable, and are used in a variety of applications, including automotive systems, industrial automation and control, smart homes and buildings, and connected devices.
NXP is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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