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2N3955A Datasheet (PDF) - Vishay Siliconix

2N3955A Datasheet PDF - Vishay Siliconix
Part # 2N3955A
Download  2N3955A Download
File Size   85.64 Kbytes
Page   1 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description monolithic dual n-channel JFETs designed for

2N3955A Datasheet (PDF)

Go To PDF Page Download Datasheet
2N3955A Datasheet PDF - Vishay Siliconix

Part # 2N3955A
Download  2N3955A Click to download

File Size   85.64 Kbytes
Page   1 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description monolithic dual n-channel JFETs designed for

2N3955A Datasheet (HTML) - Vishay Siliconix


2N3955A Product details

• Low and Medium Frequency Differential Amplifiers
• High Input Impedance Amplifiers .

BENEFITS
• High Accuracy & Stability
Offset Less Than 5 mV (2N3954, 54A)
Drift Less Than 5 fJ.VrC (2N3954A)
• Wide Dynamic Range
I G Specified @ V DS = 20 V
• Low Capacitance
Ciss <4 pF




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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