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ES1D Datasheet (PDF) - ON Semiconductor

ES1D Datasheet PDF - ON Semiconductor
Part # ES1D
Download  ES1D Download
File Size   162.37 Kbytes
Page   6 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description 1.0 A Ultra Fast Recovery Rectifier

ES1D Datasheet (PDF)

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ES1D Datasheet PDF - ON Semiconductor

Part # ES1D
Download  ES1D Click to download

File Size   162.37 Kbytes
Page   6 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description 1.0 A Ultra Fast Recovery Rectifier

ES1D Datasheet (HTML) - ON Semiconductor


ES1D Product details

Features
• For Surface Mount Applications
• Glass Passivated Junction
• Low Profile Package
• Easy Pick and Place
• Built−in Strain Relief
• Superfast Recovery Times for High Efficiency
• This Device is Pb−Free and is RoHS Compliant
Applications
• This Product is General Usage and Suitable for Many Different
Applications




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About ON Semiconductor


ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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