APT6013B2LL_04 Datasheet(PDF) - Microsemi Corporation

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APT6013B2LL Datasheet (PDF) - Microsemi Corporation

APT6013B2LL Datasheet PDF - Microsemi Corporation


Part #	APT6013B2LL_04

Download	APT6013B2LL Download

File Size	200.42 Kbytes

Page	5 Pages

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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Description

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT6013B2LL Datasheet (PDF)

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APT6013B2LL Datasheet PDF - Microsemi Corporation


Part #	APT6013B2LL_04

Download	APT6013B2LL Click to download

File Size	200.42 Kbytes

Page	5 Pages

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

Logo

Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT6013B2LL Datasheet (HTML) - Microsemi Corporation

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Similar Part No. - APT6013B2LL_04

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About Microsemi Corporation

Microsemi Corporation was an American company that specialized in the design and manufacture of semiconductor and system solutions.
The company was founded in 1960 and was headquartered in Aliso Viejo, California.
Microsemi provided a wide range of products including analog and mixed-signal integrated circuits, field-programmable gate arrays (FPGAs), power management and control products, and other semiconductor solutions.
The company's products were used in various applications such as defense and security, aerospace and aviation, industrial, and communications.
Microsemi was known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
In 2018, Microsemi was acquired by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and security products.
The Microsemi brand is no longer in use, but its technology and products continue to be a part of Microchip's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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