Features and Benefits
 Tunneling Magnetoresistance (TMR) Technology
 Ultra Low Power Consumption at 1.5μA
 High Frequency Response up to 1kHz
 Bipolar Latching Operation
 Low Operate Points for High Sensitivity
 Compatible with a Wide Range of Supply Voltages
 Excellent Thermal Stability
 High Tolerance to External Magnetic Field Interference

Applications
 Utility Meters including
Water, Gas, and Heat Meters
 Solid State Switches
 Speed Sensing
 Rotary and Linear Position
Sensing

General Description
The MMS1X1H is a digital bipolar magnetic switch that integrates TMR and CMOS
technology in order to provide a magnetically triggered digital switch with high sensitivity, high
speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic sensor
and CMOS signal processing circuitry within the same package. Designed for use in applications
that are both power-critical and performance-demanding, this device includes an on-chip TMR
voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt
trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal
band gap regulator is used to provide temperature compensated supply voltage for internal circuits,
and it allows a wide range of operating supply voltages. The MMS1X1H draws only 1.5μA
resulting in ultra-low power operation, additionally it has fast response, accurate switching points,
excellent thermal stability, and immunity to stray field interference. It is available in two packaging
form factors: SOT23-3 (P/N MMS1X1HS), or TO-92S (P/N MMS1X1HT).