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AOT15B65M3 Datasheet (PDF) - Alpha & Omega Semiconductors

AOT15B65M3 Datasheet PDF - Alpha & Omega Semiconductors
Part # AOT15B65M3
Download  AOT15B65M3 Download
File Size   558.6 Kbytes
Page   9 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 650V, 15A Alpha IGBT TM With soft and fast recovery anti-parallel diode

AOT15B65M3 Datasheet (PDF)

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AOT15B65M3 Datasheet PDF - Alpha & Omega Semiconductors

Part # AOT15B65M3
Download  AOT15B65M3 Click to download

File Size   558.6 Kbytes
Page   9 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 650V, 15A Alpha IGBT TM With soft and fast recovery anti-parallel diode

AOT15B65M3 Datasheet (HTML) - Alpha & Omega Semiconductors


AOT15B65M3 Product details

General Description
• Latest AlphaIGBT (αIGBT) Technology
• 650V Breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient Turn-On di/dt controllability
• Low VCE(sat) enables high efficiencies
• Low Turn-Off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness

Applications
• Motor drives
• Sewing machines
• Home appliances
• Fan, Pumps, Vacuum cleaner
• Other hard switching applications




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About Alpha & Omega Semiconductors


Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs).
The company was founded in 1995 and has its headquarters in San Jose, California.
AOS provides a wide range of power management solutions for applications in consumer electronics, computing, telecommunications, and industrial systems, among others.
The company is known for its cutting-edge technology and innovative products, and it has a strong reputation in the semiconductor industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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