Features
• Integrated driver, control MOSFET Q1 and synchronous MOSFET Q2
• On-chip MOSFET Current sensing and reporting at 5uA/A.
• Input voltage (VIN) range of 4.25 V to 16 V
• VCC and VDRV supply of 4.25 V to 5.5 V
• Output voltage range from 0.225 V up to 5.5 V at VIN = 12 V
• Output current capability of 60 A
• Operation up to 2 MHz
• VDRV under-voltage lockout (UVLO)
• Bootstrap under-voltage protection
• 8mV / °C temperature analog output
• Over-temperature protection and thermal shutdown
• Cycle-by-cycle over current Protection (OCP) and flag
• Control MOSFET short (HSS) detection and flag
• Auto-replenishment on bootstrap capacitor
• Compatible with 3.3 V tri-state PWM Input
• Auto SLEEP mode after 20 μs of PWM Tri-state (1.6 mA typ)
• DEEP SLEEP mode for power saving via EN= low (32 μA typ)
• Small 5 mm x 6 mm x 0.9 mm PQFN package
• Lead free RoHS compliant package
• Compliant to automotive AEC-Q100 Rev H Grade 1 requirements