Features and Benefits
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150°C operating temperature

Description:
t utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.