This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• NBR and NRVB Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable*
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings:
♦ Charged Device Model > 1000 V (Class C5)
♦ Human Body Model = 3B
• These Devices are Pb−Free and are RoHS Compliant
• Device Meets MSL1 Requirements