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IRG4BH20K-LPBF Datasheet (PDF) - International Rectifier
IRG4BH20K-LPBF Datasheet PDF - International Rectifier
Part # IRG4BH20K-LPBF
Download  IRG4BH20K-LPBF Download
File Size   298.36 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )

IRG4BH20K-LPBF Datasheet (PDF)

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IRG4BH20K-LPBF Datasheet PDF - International Rectifier

Part # IRG4BH20K-LPBF
Download  IRG4BH20K-LPBF Click to download

File Size   298.36 Kbytes
Page   8 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )

IRG4BH20K-LPBF Datasheet (HTML) - International Rectifier


IRG4BH20K-LPBF Product details

Features
• High short circuit rating optimized for motor control,
    tsc =10µs @ VCC = 720V , TJ = 125°C,
    VGE = 15V
• Combines low conduction losses with high
    switching speed
• Latest generation design provides tighter parameter
    distribution and higher efficiency than previous
    generations
• Industry standard TO-262 package
• Lead-Free

Benefits
• As a Freewheeling Diode we recommend our
    HEXFREDTM ultrafast, ultrasoft recovery diodes for
    minimum EMI / Noise and switching losses in the
    Diode and IGBT
• Latest generation 4 IGBTs offer highest power
    density motor controls possible




Similar Part No. - IRG4BH20K-LPBF

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International Rectifier		 IRG4BH20K-LPBF IRF-IRG4BH20K-LPBF Datasheet
337Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR
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Similar Description - IRG4BH20K-LPBF

ManufacturerPart #DatasheetDescription
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International Rectifier		 IRG4PH20K IRF-IRG4PH20K Datasheet
229Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
IRG4PH20KD IRF-IRG4PH20KD Datasheet
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IRG4PH30K IRF-IRG4PH30K Datasheet
161Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
IRG4PH40K IRF-IRG4PH40K Datasheet
157Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
IRG4PH40U IRF-IRG4PH40U Datasheet
163Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)
IRG4PH50K IRF-IRG4PH50K Datasheet
92Kb / 6P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
IRG4PH50S IRF-IRG4PH50S Datasheet
130Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
IRG4PH50U IRF-IRG4PH50U Datasheet
134Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
IRG4RC10K IRF-IRG4RC10K Datasheet
134Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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